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  egf30ah thru EGF30MH surface mount glass passivated junction high efficient rectifier reverse voltage - 50 to 1000 volts forward current - 3.0 amperes features mechanical data * halogen-free type * gprc (glass passivated rectifier chip) inside * glass passivated cavity-free junction * ideal for surface mount automotive applications * superfast recovery time for high efficiency * built-in strain relief * easy pick and place * high temperature soldering guaranteed: 260 o c/10 seconds, at terminals * plastic package has underwriters laboratory flammability classification 94v-0 case : jedec do-214aa molded plastic over passivated chip terminals : tin plated, solderable per mil-std-750, method 2026 polarity : color band denotes cathode end weight : 0.004 ounes , 0.12 gram maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified. maximum repetitive peak reverse voltage maximum rms voltage maximum average forward rectified current (see fig.1) peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) maximum instantaneous forward voltage at 3.0 a maximum dc reverse current at rated dc blocking voltage t a =25 o c t a =125 o c t a =150 o c maximum reverse recovery time (note 1) typical junction capacitance (note 2) typical thermal resistance (note 3) operating junction and storage temperature range symbols v rrm v rms v dc i (av) i fsm v f i r trr c j r ja r jl t j ,t stg egf30 3.0 115 105 1.0 1.25 1.7 5 50 120 5 120 - 50 75 75 47 12 -65 to +175 units volts volts maximum dc blocking voltage ah 50 35 50 bh 100 70 100 dh 200 140 200 gh 400 280 400 jh 600 420 600 mh 1000 700 1000 kh 800 560 800 volts volts amps amps ua ns pf o c / w o c notes : (1) reverse recovery test condition : i f 0.5a, i r =1.0a, irr=0.25a (2) measured at 1.0 mhz and applied reverse voltage of 4.0 volts (3) thermal resistance from junction to ambient and from junction to lead p.c.b. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas. smb/do-214aa *dimensions in inches and (millimeters) patented tm 0.150(3.80) 0.130(3.30) 0.096(2.43) 0.079(2.00) 0.055(1.40) 0.039(1.0) 0.016(0.40) 0.006(0.15) 0.187(4.75) 0.167(4.24) 0.087(2.20) 0.075(1.90) 0.236(6.00) 0.197(5.00) zowie technology corporation rev. 0
ratings and characteristic curves egf30ah thru EGF30MH fig.1 - forward current derating curve fig.3 - typical instantaneous forward characteristics average forward rectified current, amperes 3.0 1.0 2.0 iinstantaneous forward current, amperes 0.10 1.00 10.00 0.01 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.8 1.6 0 0 25 50 75 100 125 150 175 resistive or inductive load pulse width=300us 1% duty cycle lead temperature, o c instantaneous forward voltage, volts fig.2 - maximum non-repetitive peak forward surge current peak forward surge current, amperes number of cycles at 60hz 8.3ms single half sine-wave (jedec method) 0 30 15 45 120 90 105 60 75 1 10 100 egf30jh~EGF30MH egf30ah~egf30gh fig.5 - typical junction capacitance t j = 25 o c reverse voltage, volts .1 1 junction capacitance, pf 40 200 .2 .4 1.0 2 4 10 20 40 100 2 4 10 6 20 60 100 egf30jh~EGF30MH egf30ah~egf30dh egf30gh zowie technology corporation rev. 0 fig.4 - typical reverse characteristics percent of rated peak reverse voltage,% instantaneous reverse leakage current, microamperes 0.1 0 20 1 10 100 t j = 25 o c t j = 125 o c t j = 150 o c 40 60 80 100 110


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